The group is internationally recognised for research in the simulation, design and optimisation of both III-V and silicon-based semiconductor devices, in particular quantum cascade lasers, quantum well photodetectors, electro-optic modulators and quantum-dot devices, operating across the near-infrared, mid-infrared and THz spectral ranges. Our work on silicon photonics is focused on the design of silicon and germanium-based optoelectronic devices suitable for integration on silicon substrates.

• DURATION

  1 Year

• FEES

  31,000

• EXAMS

  IELTS